JPH0325401Y2 - - Google Patents
Info
- Publication number
- JPH0325401Y2 JPH0325401Y2 JP1985121691U JP12169185U JPH0325401Y2 JP H0325401 Y2 JPH0325401 Y2 JP H0325401Y2 JP 1985121691 U JP1985121691 U JP 1985121691U JP 12169185 U JP12169185 U JP 12169185U JP H0325401 Y2 JPH0325401 Y2 JP H0325401Y2
- Authority
- JP
- Japan
- Prior art keywords
- shutter
- molecular beam
- film
- view
- cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1985121691U JPH0325401Y2 (en]) | 1985-08-08 | 1985-08-08 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1985121691U JPH0325401Y2 (en]) | 1985-08-08 | 1985-08-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6230333U JPS6230333U (en]) | 1987-02-24 |
JPH0325401Y2 true JPH0325401Y2 (en]) | 1991-06-03 |
Family
ID=31011195
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1985121691U Expired JPH0325401Y2 (en]) | 1985-08-08 | 1985-08-08 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0325401Y2 (en]) |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2450896A1 (de) * | 1973-10-30 | 1975-05-07 | Gen Electric | Halbleitervorrichtungen und temperaturgradienten-zonenschmelzverfahren zur herstellung derselben |
-
1985
- 1985-08-08 JP JP1985121691U patent/JPH0325401Y2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS6230333U (en]) | 1987-02-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3817206B2 (ja) | 高絶縁性単結晶窒化ガリウム薄膜を有する半導体デバイス | |
TW201405636A (zh) | 多層基板結構及其製造方法與系統 | |
JPH01245512A (ja) | 3−v族化合物半導体のエピタキシャル成長方法 | |
JPH0325401Y2 (en]) | ||
US8900362B2 (en) | Manufacturing method of gallium oxide single crystal | |
JP2004296821A (ja) | ZnO系半導体素子およびその製造方法 | |
JPH09118590A (ja) | 分子線エピタキシャル成長方法及びその装置 | |
Pearton et al. | Ion implantation processing of GaAs and related compounds | |
JPS6263419A (ja) | 多結晶シリコン薄膜の形成方法 | |
WO1990003659A1 (en) | Fabrication of semiconductor nanostructures | |
JPH0238442Y2 (en]) | ||
JPH04309237A (ja) | カルコパイライト薄膜の作製方法及び太陽電池 | |
JPH04317495A (ja) | 分子線エピタキシャル成長方法および成長装置 | |
JPS63211728A (ja) | 半導体の製造方法 | |
JPH02161719A (ja) | 半導体装置およびその製造方法 | |
EP0472347A2 (en) | Method of making a contact on a group III-V compound semiconductor device | |
JPS60133720A (ja) | 分子線エピタキシヤル成長方法 | |
JPS61141119A (ja) | 分子線結晶成長装置 | |
JPS60235788A (ja) | 単結晶膜の形成方法 | |
JPS59228713A (ja) | 半導体装置の製造方法 | |
JPH01197388A (ja) | 分子線結晶成長装置 | |
JPH0426588A (ja) | 分子線結晶成長装置 | |
JPS6344786A (ja) | 半導体レ−ザ装置 | |
JPH04325499A (ja) | カリウム添加硫化カドミウム亜鉛混晶薄膜の製造方法 | |
JPH01203290A (ja) | 分子線結晶成長方法 |